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Silicon Carbide: Materials, Processing & Devices (Optoelectronic Properties of Semiconductors and Superlattices)
 
 
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Silicon Carbide: Materials, Processing & Devices (Optoelectronic Properties of Semiconductors and Superlattices) [Hardcover]

Chuan Feng Zhe (Author)

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Book Description

1591690234 978-1591690238 October 30, 2003 1
This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.

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About the Author

Dr. Zhe Chuan Feng received his Ph.D. from the University of Pittsburgh. He has worked both within academia and industry on semiconductor growth, process, characterization, semiconductor devices, and lasers. He is currently a Senior Research Scientist at the School of Electrical & Computer Engineering at the Georgia Institute of Technology, focusing on widegap III-Nitrides, SiC and other compound semiconductors.
Dr. Jian H. Zhao received his Ph.D. in Electrical Engineering from Carnegie Mellon University in 1988 and joined Rutgers University in the same year. He is Professor and Director of SiCLAB and his research results have been summarized in more than 110 refereed papers and over 140 conference papers and presentations, as well as four book chapters and a book titled Optical Filter Design and Analysis: A Signal Processing Approach. He holds five patents.

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Inside This Book (learn more)
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
tekhnika poluprovodnikov, high temperature device applications, defect electroluminescence, defect photoluminescence, carrier ionization energy, specific contact resistance value, bulk avalanche breakdown, fractional rings, low specific contact resistance, elementary screw dislocations, implant depth profiles, positive bevel, critical growth conditions, sublimation epitaxy, stoichiometric disturbances, reststrahl band, hexagonal defects, annealed contacts, low bulk resistivity, implant concentration, bound excitors, satellite streaks, adsorbed chemical species, contact broadening, isoelectronic defects
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Elsevier Science, Solid State, Device Lett, New York, Appl Phys, American Institute of Physics, Russian Academy of Sciences, Crystal Growth, Materials Research Society, Surf Sci, Trans Tech Publications, Methods Phys, John Wiley, Status Solidi, Ni-based Ohmic, Solid-State Electron, High Temp, University of South Carolina Press, The Auger, The Zeeman, Physics of Semiconductor Devices, University of South Florida, Reconstruction Figure, Academic Press, Thin Solid Films
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