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Solid State Electronic Devices Hardcover – February 1, 1995

ISBN-13: 978-0131587670 ISBN-10: 0131587676 Edition: 4th

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Product Details

  • Series: Prentice Hall Series in Solid State Physical Electronics
  • Hardcover: 462 pages
  • Publisher: Prentice Hall; 4 edition (February 1, 1995)
  • Language: English
  • ISBN-10: 0131587676
  • ISBN-13: 978-0131587670
  • Product Dimensions: 9.4 x 7 x 1 inches
  • Shipping Weight: 1.7 pounds
  • Average Customer Review: 3.6 out of 5 stars  See all reviews (33 customer reviews)
  • Amazon Best Sellers Rank: #2,406,120 in Books (See Top 100 in Books)

Editorial Reviews

From the Publisher

This revision of the most widely used introduction to solid state electronic devices was developed with two basic purposes: 1) to provide students with a sound understanding of existing devices so their studies of electronic circuits and systems will be meaningful, and 2) to develop the basic tools with which they can later learn about applications and the latest devices.

From the Inside Flap

Preface

This book is an introduction to semiconductor devices for undergraduate electrical engineers, other interested students, and practicing engineers and scientists whose understanding of modern electronics needs updating. The book is organized to bring students with a background in sophomore physics to a level of understanding which will allow them to read much of the current literature on new devices and applications. Goals

An undergraduate course in electronic devices has two basic purposes: (1) to provide students with a sound understanding of existing devices, so that their studies of electronic circuits and systems will be meaningful; and (2) to develop the basic tools with which they can later learn about newly developed devices and applications. Perhaps the second of these objectives is the more important in the long run; it is clear that engineers and scientists who deal with electronics will continually be called upon to learn about new devices and processes in the future. For this reason, we have tried to incorporate the basics of semiconductor materials and conduction processes in solids, which arise repeatedly in the literature when new devices are explained. Some of these concepts are often omitted in introductory courses, with the view that they are unnecessary for understanding the fundamentals of junctions and transistors. We believe this view neglects the important goal of equipping students for the task of understanding a new device by reading the current literature. Therefore, in this text most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices. Reading Lists

As a further aid in developing techniques for independent study, the reading list at the end of each chapter includes a few articles which students can read comfortably as they study this book. Some of these articles have been selected from periodicals such as Scientific American and Physics Today, which specialize in introductory presentations. Other articles chosen from books and the professional literature provide a more quantitative treatment of the material. We do not expect that students will read all articles recommended in the reading lists; nevertheless, some exposure to periodicals is useful in laying the foundation for a career of constant updating and self-education. Problems

One of the keys to success in understanding this material is to work problems that exercise the concepts. The problems at the end of each chapter are designed to facilitate learning the material. Very few are simple "plug-in" problems. Instead, they are chosen to reinforce or extend the material presented in the chapter. Units

In keeping with the goals described above, examples and problems are stated in terms of units commonly used in the semiconductor literature. The basic system of units is rationalized MKS, although cm is often used as a convenient unit of length. Similarly, electron volts (eV) are often used rather than joules (J) to measure the energy of electrons. Units for various quantities are given in Appendices I and II. Presentation

In presenting this material at the undergraduate level, one must anticipate a few instances which call for a phrase such as "It can be shown. . ." This is always disappointing; on the other hand, the alternative is to delay study of solid state devices until the graduate level, where statistical mechanics, quantum theory, and other advanced background can be freely invoked. Such a delay would result in a more elegant treatment of certain subjects, but it would prevent undergraduate students from enjoying the study of some very exciting devices.

The discussion includes both silicon and compound semiconductors, to reflect the continuing growth in importance for compounds in optoelectronic and high-speed device applications. Topics such as heterojunctions, lattice matching using ternary and quaternary alloys, variation of band gap with alloy composition, and properties of quantum wells add up to the breadth of the discussion. Not to be outdone by the compounds, silicon-based devices have continued their dramatic record of advancement. The discussion of FET structures and Si integrated circuits reflects these advancements. Our objective is not to cover all the latest devices, which can only be done in the journal and conference literature. Instead, we have chosen devices to discuss which are broadly illustrative of important principles.

The first four chapters of the book provide background on the nature of semiconductors and conduction processes in solids. Included is a brief introduction to quantum concepts (Chapter 2) for those students who do not already have this background from other courses. Chapter 5 describes the p-n junction and some of its applications. Chapters 6 and 7 deal with the principles of transistor operation. Chapter 8 covers optoelectronics and Chapter 9 discusses integrated circuits. Chapters 10 and 11 apply the theory of junctions and conduction processes to microwave and power devices. All of the devices covered are important in today's electronics; furthermore, learning about these devices should be an enjoyable and rewarding experience. We hope this book provides that kind of experience for its readers. Acknowledgements

The fifth edition benefits greatly from comments and suggestions provided by students and teachers of the first four editions. The book's readers have generously provided comments which have been invaluable in developing the present version. We remain indebted to those persons mentioned in the Preface of the first four editions, who contributed so much to the development of the book. In particular, Nick Holonyak has been a source of continuing information and inspiration for all five editions. Additional thanks go to our colleagues at UT-Austin who have provided special assistance, particularly Joe Campbell, Ray Chen, Dennis Deppe, Russ Dupuis, Archie Holmes, Dim-Lee Kwong, Jack Lee, Christine Maziar, Dean Neikirk, and Al Tasch. Kay Shores and Qingyou Lu provided useful assistance with the typing. We thank the many companies and organizations cited in the figure captions for generously providing photographs and illustrations of devices and fabrication processes. Kobi Benzvi and Pradipto Mukherjee at Motorola, Shubneesh Batra and Mary Miller at Micron, and Tom Way at IBM deserve special mention. Finally, we recall with gratitude many years of association with the late Greg Stillman, a valued colleague and friend. Ben G. Streetman
Sanjay Banerjee --This text refers to an out of print or unavailable edition of this title.


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Customer Reviews

During my career, I found this to be one of my most useful books.
P. McWhorter
Why don't they explain the problem and the concepts first to give a first feel of what we're trying to achieve to the reader and then bring the math.
Amazon Customer
Streetman's conversational style works well with presenting sometimes difficult material in a very straightforward manner.
cjp@bell-labs.com

Most Helpful Customer Reviews

28 of 28 people found the following review helpful By Salir on July 26, 2007
Format: Hardcover
If you are an EE sophomore/junior or senior and want to buy a book on semiconductor physics or devices that is both comprehensive in its depth and coverage of topics, I'd highly recommend this book. Its explanation of the working of FETs is very lucid and takes you all the way up to III-V HEMTs; similarly derivation of drift-diffusion/continuity equations for BJTs are explained in great detail and advanced devices like HBTs are also covered. Furthermore, if you are confused about energy band diagrams, this book is for you.
Let me briefly compare it with other similar books:
1- Semiconductor devices --Physics and Technology, 2nd edition by S. M. Sze--Standard, very good, but a little advanced textbook on semiconductors. Its explanation of FETs working and its assoicated band diagrams is not very comprehensive. Semiconductor Devices: Physics and Technology, 2nd Edition
2- Semiconductor Device fundamentals by R. F. Peirret-- An excellent book on the fundamentals, especially concepts of band diagrams, but again I found its coverage of FET devices not as good as that of Streetman. Semiconductor Device Fundamentals
3- Physics of semiconductor devices by M. Shur-- Shur is an expert on III-V devices modelling and simulations, but for fundamentals of semiconductor devices I won't recommend this to a sophomore!
...Read more ›
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6 of 6 people found the following review helpful By A. Potter on January 17, 2006
Format: Hardcover
I'm an undergrad physics/engineering student. I thought this book was reasonably well written and clear. It could benefit from more example problems, and some solution techniques.

Also, I like to have my textbooks be at a slightly higher level than the associated class. This book kind of fell short of that mark in some cases (particularly with heterojunctions and optoelectronics).

Another observation, which isn't really a complaint, is that the book is written as a textbook rather than a reference. The formulas and charts are presented in logical sequence with the text, which makes it nice to read, but leads to a lot of paging to find that graph of mobilities vs. doping, or the formulas for the currents through a BJT, etc... (Kind of the opposite of Sze, where the formulas are collected nicely, but the exposition is virtually nonexistant).

A final thing that somewhat annoyed me, but didn't really detract from the book, was that the author insisted on using Laplace transforms to analyze some things. Which is a bit overkill for solving things like y''=y.

Overall, it's a good book, which explains the underlying concepts clearly.
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5 of 5 people found the following review helpful By R. Chen on January 3, 2009
Format: Hardcover
Streetman wrote this book as an assistant professor almost 40 years ago at the rise of the industry. He and his former student (a professor at UT Austin) have continually updated this book into its sixth edition. With so many revisions and accolades, you can be quite confident that this book will serve as a solid text for learning about the operation and fabrication of traditional and modern semiconductor devices.

I've read this book twice through in detail along with Pierret's Semiconductor Device Fundamentals, parts of S. Sze's book, and many other books that cover semiconductor physics. For an undergraduate learning the material for the first time, I HIGHLY recommend reading Pierret's book instead, with this book for more detail on modern devices and additional information on basic topics. Pierret holds your hand as he walks you through the material, explaining many details and limiting cases for basic material...Streetman doesn't quite do that. Pierret also puts some emphasis on computational solutions and graphing via MATLAB, which I think is very useful for learning and necessary in more advanced works.

Streetman excels in mentioning and explaining many unconventional effects and advanced devices, as well as talking about integrated circuits. In addition, Streeman spends many sections on fabrication techniques and device processing. He also includes some nice curves, material properties, and useful equations placed in known areas of the book (front/back cover, appendix, etc...), which are very useful for quick reference. Clearly, this book is better for an advanced reader, but I did appreciate some of Streetman's explanations (especially for the operation of a BJT) and the overall progression of the sections, which are very useful for a first-time reader.
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7 of 9 people found the following review helpful By Farseem Mohammedy on December 29, 2004
Format: Hardcover
This is the BEST textbook on solid-state devices. I used this book in my undergraduate and even in graduate courses. This book is also helpful for any researchers on electronic devices. Students and engineers alike like to refer to this book pretty often as it explains many fundamental ideas in pn junctions which are at the heart of presen-day technology and carries on the concept up to MOS devices. This is not a reference book but it provides the basic training required to learn new devices. A made-easy version of this book is Neaman's text.
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