This book studies the electrical, optical and structural properties of the Be-oped GaInas/AlGaAs multiple quantum-well structures (MQWs) at different doping density in the GaInls well, both designed and fabricated in house. The higher Be-doping density in the wells was found to enhance the compressive strain and increase barrier height of the GaInAs/AlGaAs MQWs through extensive optical characterisation. It caused the shifts of the sub-energy levels in the valence band of the well material and the absorption wavelength resulting from the intersubband absorption. These observations were verified by theoretical calculation based on the six-band Luttinger-Kohn model by taking the Be-doping into account.
Wei Shi is an EE Ph.D with over 12+ years industrial experiences in all aspects of ASIC/IC semiconductor area, , focusing on ASIC backend, including Design Planning, Timing/Noise Closure, DFTs, Design/Test Verification and Taping Out, with in-depth ASIC methodology/tool knowledge and hands-on experiences.
Areas of Wei's expertise and Strengths:
* Vast Experience of ASICs, working closely with Clients, Application, Methodology/Tools and Production Team of the best in the industry.
* Timing Expertise from planning to sign-off of two dozens of complex ASICs/SOCs, across networking and communication industry.
* Research and Development of the ASIC technology/Methodology.
* Design for Test, including test insertions and verifications, and formal verifications
* Semiconductor material, devices and physics.
Dr. Shi has been published 19+ papers in international Journals and international conferences in the semiconductor material, devices and physics field, one patent granted, authored one book and one chapter book, and invited to reviewed multiple peer's Papers. The published paper have been cited over 50+ times by researchers around the world. And Wei was a key member of an National Research project by National Nature Science Fund Committee, that project has completed successfully, and appraised by the national committee as leading internationally in technology and the innovations in semiconductor theory.
Dr. Shi is a active Sr. IEEE member and Sigma Xi member.
