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Narrow Gap II-VI Compounds for Optoelectronic and (Electronic Materials Series)
 
 
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Narrow Gap II-VI Compounds for Optoelectronic and (Electronic Materials Series) (Hardcover)

by Peter Capper (Editor) "Despite the rapid progress which has taken place in the last two decades in various epitaxial growth techniques for narrow-gap II-VI compounds (Chapters 2-4), bulk..." (more)
Key Phrases: hydrogen hydrogen plasma, pseudobinary melts, bulk growth methods, Infrared Phys, Status Solidi, New York (more...)
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Product Description
Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications will enable readers to gain an insight into this extremely important area of electronic materials activity. Specialists in the field will benefit from its wide-ranging and topical coverage of the subject. At the same time, each of the chapters covers the basic principles associated with the topic concerned and includes references for further study and so will be suitable for advanced graduate courses. Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications is organised in three main sections. The first covers the growth of materials from the earliest, though still used, bulk techniques, through to the more recent epitaxial techniques, based on both liquid and gas phases, and includes the exciting new area of low dimensional solids and the novel concepts which arise from them. The second section discusses the properties of the materials which make them useful in optical, transport, doping, defects, diffusion and structural applications, and the interfacial and surface effects. In addition, there is a separate chapter on dilute magnetic semiconductors and their unique and fascinating properties. Finally, there is a devices section which encompasses the major fields of infrared detection and emission, by several device types, and the expanding areas of solar cell production and room temperature detection of X-rays and gamma-rays.

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Inside This Book (learn more)
First Sentence:
Despite the rapid progress which has taken place in the last two decades in various epitaxial growth techniques for narrow-gap II-VI compounds (Chapters 2-4), bulk growth methods still play an important role in preparing device quality material and in producing substrates for these epitaxial techniques. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
hydrogen hydrogen plasma, pseudobinary melts, bulk growth methods, inverted band structure, tellurium organometallic, high recombination velocity, negative luminescence, vapour growth, situ electrical measurements, mercury vacancies, band edge moves, low recombination velocity, net hole concentration, silicon multiplexer, bulk growth techniques, crystallographic polarity, tellurium source, optical immersion, travelling heater method, interband interactions, semiconducting regime, sphalerite lattice, sphalerite form, native layers, voltage responsivity
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Infrared Phys, Status Solidi, New York, Solid State Commun, Growth Charact, Academic Press, Quantum Electron, Solid-State Electron, Elsevier Science, Superlattices Microstruct, Photovoltaic Solar Energy Conf, Acta Phys, Thin Solid Films, Nguyen Duy, Omm Bias, Photovoltaic Specialists Conf, Plenum Press, Surf Sci, Optical Engineering Press, Patent Appl, Pergamon Press, World Scientific, Compound Passivation Method Ref, Conf Ser, Hg-rich Bridgman
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