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MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley Classics Library)
 
 
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MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley Classics Library) (Paperback)

by E. H. Nicollian (Author), J. R. Brews (Author) "Control of the electrical properties of the MOS system has been one of the major factors that has led to stable and high performance silicon..." (more)
Key Phrases: interface trap level density, interface trap levels, frequency capacitance method, Solid-State Electron, New York, Electron Devices (more...)
5.0 out of 5 stars See all reviews (1 customer review)

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  • This item: MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley Classics Library) by E. H. Nicollian

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Editorial Reviews

Product Description
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

From the Publisher
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability. --This text refers to the Hardcover edition.

See all Editorial Reviews

Product Details

  • Paperback: 928 pages
  • Publisher: Wiley-Interscience (November 21, 2002)
  • Language: English
  • ISBN-10: 047143079X
  • ISBN-13: 978-0471430797
  • Product Dimensions: 9.3 x 5.9 x 1.7 inches
  • Shipping Weight: 2.8 pounds (View shipping rates and policies)
  • Average Customer Review: 5.0 out of 5 stars See all reviews (1 customer review)
  • Amazon.com Sales Rank: #170,330 in Books (See Bestsellers in Books)

    Popular in this category: (What's this?)

    #23 in  Books > Professional & Technical > Engineering > Electrical & Electronics > Semiconductors

Inside This Book (learn more)
First Sentence:
Control of the electrical properties of the MOS system has been one of the major factors that has led to stable and high performance silicon integrated circuits. Read the first page
Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
interface trap level density, interface trap levels, frequency capacitance method, interface trap properties, interface trap level densities, oxide fixed charge density, bulk trap levels, interface trap response, trap admittance, acceptor interface traps, minority carrier response time, gate bias corresponding, charge nonuniformities, elementary capacitors, oxide charge distribution, given band bending, flatband point, donor interface traps, equivalent parallel conductance, interface trap charge density, interface trap sites, time constant dispersion, type interface traps, charged interface traps, negative oxide charge
Key Phrases - Capitalized Phrases (CAPs): (learn more)
Solid-State Electron, New York, Electron Devices, After Nicollian, Pergamon Press, Bell Syst, After Powell, After Snow, After Grove, After Goetzberger, Solid-State Commun, Surface Sci, After Ligenza, Electrochemical Society Meeting, General Radio, After Baccarani, After Deuling, After Kriegler, Cox Cox, Extended Abstracts of the May, After Declerck, After Gwyn, After Yon, Van Nostrand, After Brews
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MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley Classics Library)
62% buy the item featured on this page:
MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley Classics Library) 5.0 out of 5 stars (1)
$123.19
Semiconductor Material and Device Characterization
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Design of Analog CMOS Integrated Circuits
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1 of 1 people found the following review helpful:
5.0 out of 5 stars A must have, March 19, 2001
By A Customer
This is the quintessential review of the MOS capacitor. Excellently written, thorough and still very current. This text is essential for the bookshelf of all semiconductor scientists and engineers.
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