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Product Description
In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.
In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.
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Inside This Book
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First Sentence:
The amount of radiation that semiconductor devices and materials encounter during their lifecycle strongly depends on the radiation environment and their operating conditions. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
carrier removal rate, stable radiation defects, basic radiation defects, neutron radiation effects, lifetime damage factor, ionisation damage, primary radiation defects, silicon radiation detectors, static current gain, current gain degradation, more radiation tolerant, single event gate rupture, irradiation bias, radiation damage mechanisms, total dose effects, space solar cells, placement damage, irradiated silicon, proton fluence, cluster damage, room temperature irradiation, depletion voltage, implant isolation, proton damage, spacer oxides Key Phrases - Capitalized Phrases (CAPs): (learn more)
After Ohyama, After Ceschia, After Papastamatiou, After Schmidt, Monte Carlo, After Nowlin, After Watkins, After Babcock, After Kosier, After Shaneyfelt, After Zhao, Van Allen, After Chang, After Flament, After Mallik, After Papaioannou, After Rax, After Shaw, After Yount, After Barry, After Bloss, After Burkig, After Dunn, After Evans, After Goodman New!
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Front Cover | Table of Contents | First Pages | Back Cover | Surprise Me!
The amount of radiation that semiconductor devices and materials encounter during their lifecycle strongly depends on the radiation environment and their operating conditions. Read the first page Key Phrases - Statistically Improbable Phrases (SIPs): (learn more)
carrier removal rate, stable radiation defects, basic radiation defects, neutron radiation effects, lifetime damage factor, ionisation damage, primary radiation defects, silicon radiation detectors, static current gain, current gain degradation, more radiation tolerant, single event gate rupture, irradiation bias, radiation damage mechanisms, total dose effects, space solar cells, placement damage, irradiated silicon, proton fluence, cluster damage, room temperature irradiation, depletion voltage, implant isolation, proton damage, spacer oxides Key Phrases - Capitalized Phrases (CAPs): (learn more)
After Ohyama, After Ceschia, After Papastamatiou, After Schmidt, Monte Carlo, After Nowlin, After Watkins, After Babcock, After Kosier, After Shaneyfelt, After Zhao, Van Allen, After Chang, After Flament, After Mallik, After Papaioannou, After Rax, After Shaw, After Yount, After Barry, After Bloss, After Burkig, After Dunn, After Evans, After Goodman New!
Books on Related Topics | Concordance | Text Stats Browse Sample Pages:
Front Cover | Table of Contents | First Pages | Back Cover | Surprise Me!
Citations (learn more)
This book cites 23
books:
See all 23 books this book cites
- Silicon-on-Insulator Technology: Materials to VLSI by J.-P. Colinge in Back Matter (1), and Back Matter (2)
- Fundamental Aspects of Silicon Oxidation (Springer Series in Materials Science) by Yves J. Chabal in Back Matter
- Laser-Assisted Microtechnology (Springer Series in Materials Science) by Simeon M. Metev in Back Matter
- Raman Scattering in Materials Science (Springer Series in Materials Science) by Willes H. Weber in Back Matter
- New Materials by S. K. Joshi in Back Matter
See all 23 books this book cites
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