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Operation and Modeling of the MOS Transistor (The Oxford Series in Electrical and Computer Engineering) 3rd Edition

by Yannis Tsividis (Author), Colin McAndrew (Author)
4.8 4.8 out of 5 stars 9 ratings
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Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.
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  1. ISBN-10
    0195170156
  2. ISBN-13
    978-0195170153
  3. Edition
    3rd
  4. Publisher
    Oxford University Press
  5. Publication date
    September 24, 2010
  6. Language
    English
  7. Dimensions
    9.3 x 7.6 x 1.3 inches
  8. Print length
    752 pages
  9. See all details
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Customer reviews

4.8 out of 5 stars
9 global ratings

Top reviews from the United States

Dongho Lee
5.0 out of 5 stars An awesome electrical/electronics engineering textbook
Reviewed in the United States on January 31, 2011
Verified Purchase
This review is for the third-edition (ISBN 978-0-19-517015-3) of this book. All other reviews by others prior to this review are for the second-edition (ISBN 0-19-517014-8). However, all other reviews are still applicable to the third-edition.

As other reviewers already pointed out, this is a great electrical/electronics engineering textbook. The third-edition has been extensively revised and 700-page long while the second-edition is 600-page long. I have absolutely no doubt in my mind that people who enjoyed the second-edition will also enjoy the third-edition even more and will feel that the contents of the book are up-to-date.

The mathematical requirements to understand this book are introductory differential and integral calculus. And one must be willing to sit down with a pencil and paper to derive many equations in the book. Furthermore, one must have ready access to computer with mathematical software such as MATLAB with Optimization Toolbox installed. I found myself using MATLAB commands such as "fsolve" a lot to plot the graphs that I see on the book.

This book covers only Si (silicon) bulk MOS transistors and does not cover the following MOS topics.

SOI transistors
GaAs/InP transistors
RF modeling

In my opinion, the authors intended to write a textbook, not an encyclopedia. And it becomes very clear why some topics are left out of the book as one reads through the book. The books/papers covering missing topics are listed in Bibliography section at the end of each chapter. The authors never use a term such as "It is easy to see..." and skip explanations of certain topics in the book. If a topic needs to be explained, the authors went great lengths to explain the topic. The authors are also strict about using symbols, especially Greek symbols. A symbol has the same meaning throughout the entire book. This consistent symbol usage itself is not an easy feat to achieve because I have seen in many other books that one symbol means one thing in one chapter but means completely something else in another chapter.

Finally, the authors indicate in the book that additional material and errata will be posted on the following Web site.

[..]
12 people found this helpful
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Edwin A. Suominen
5.0 out of 5 stars A comprehensive and clearly written text
Reviewed in the United States on July 7, 2019
Verified Purchase
An outstanding, comprehensive, and clearly written text on the inner workings of the most important semiconductor device of all time. I was able to study the book for a few weeks and come up with a MOSFET simulation model based on physics-based equations, and feel like I actually understood what I was doing.

It’s not cheap, but I found it well worth the investment.
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AnalogJoe
4.0 out of 5 stars The content is great, but the quality of the printed book is alarmingly low!
Reviewed in the United States on August 16, 2015
Verified Purchase
This book covers every little nuance about the MOS transistor, I havent seen any other book as comprehensive as this one focusing soley on the MOS transistor, a course on semiconductor physics is a pre-requisite, I recommend reading Sedra/Smith book first as an introduction to the subject. The book is written from a physics perspective rather than an engineering perspective, meaning that this is not the book you want if you are looking for applications or useful circuits.

What I really disliked about the book is the construction of the book, some pages of my book are completely screwed up, for example: one of the pages is composed of 2 sheets of paper pasted on top of each other, the first half of the page is one piece of paper and at the middle of the page pasted on top of the first piece of paper theres a second piece of paper which makes up the second half of the page, weird stuff like that happens all over the book. The binding is horrible, the page block completely unglued from the spine of the book, and I had to re-glue it by myself, otherwise the pages would start falling off.

I've experienced this trend of poor quality hardcover books many times, when someone buys a hardcover book he/she expects to keep that book for a long time, yet it seems that today hardcover books are completely disposable, editorials unethically take advantage by using cheap binders and materials whilst overpricing their books. The cheap international edition of this book being sold in developed countries seems to have better quality than the hardcover US edition!, yet it costs merely a fraction of the hardcover editon's price.
One person found this helpful
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Tianyao Hua
5.0 out of 5 stars Nice book
Reviewed in the United States on September 20, 2018
Verified Purchase
My professor who is also the author said that the book I bought is in good condition.
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hanfeng wang
5.0 out of 5 stars The best MOSFET physics book
Reviewed in the United States on December 14, 2017
Verified Purchase
Rigorous mathematical derivation with the help of in-depth intuitive explanation.
The best MOSFET physics book.
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Amazon Customer
5.0 out of 5 stars Exactly what I needed at the time I needed it and great value.
Reviewed in the United States on September 22, 2019
Verified Purchase
Graduate studies
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James E. Stine
5.0 out of 5 stars Fantastic book on MOS devices
Reviewed in the United States on July 20, 2023
I use this book in my class and its such a fantastic text. It is full of correct details for MOS devices and really brings the readers along with the theory. It explains many of the advanced science, as well. It would be great to have this book updated for 2023, but I understand it was written in 2010 and can be supplemented with additional material as the authors give the correct theory on MOS devices. I highly recommend this text!!!!
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Stove
5.0 out of 5 stars I keep coming back to it!
Reviewed in the United States on July 9, 2011
This is probably the best textbook I have used in my entire academic career (MS student in Electrical Engineering). If you want to know about the MOS transistor, read this book. The author assumes knowledge approximate to that of an undergraduate class in semiconductor devices.

From a great chapter on the MOS capacitor, to HF modeling, to small dimension effects, I keep returning to this book to refresh my memory on just about every aspect of MOSFET operation. Not only does it have all of the math and physics you want, but the actual writing is pretty insightful, too.

This book is to MOSFETS what Grey & Meyer are to analog IC design.
2 people found this helpful
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Top reviews from other countries

Noname
5.0 out of 5 stars Great book
Reviewed in Germany on May 23, 2020
Verified Purchase
Great book. Has nice accompanying lectures on Coursera.org from the author.

Might be a bit outdated now that would has gone FinFET
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